kw.\*:("RECOMBINAISON AUGER")
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RECOMBINAISON AUGER DANS LES SEMICONDUCTEURS DE TYPE P A BANDE ETROITEGEL'MONT BL.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1316-1319; BIBL. 7 REF.Article
ESTIMATION OF SECOND-ORDER AUGER RECOMBINATION IN LEAD CHALCOGENIDESZIEP O.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 1; PP. 161-170; ABS. GER; BIBL. 20 REF.Article
THE EQUIVALENCE OF TWO RECENT AUGER RECOMBINATION RATE CALCULATIONSROBBINS DJ; YOUNG A.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 102; NO 2; PP. K143-K147; BIBL. 5 REF.Article
RECOMBINAISON AUGER DANS LE GERMANIUMAKULINICHEV VV.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 6; PP. 1197-1200; BIBL. 7 REF.Article
AUGER RECOMBINATION RATE IN INGAASP LASERSBURT MG.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 806-807; BIBL. 12 REF.Article
THEORY OF PHONON-ASSISTED AUGER RECOMBINATION IN SEMICONDUCTORSTAKESHIMA M.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 12; PP. 6625-6637; BIBL. 20 REF.Article
MEASUREMENT OF RADIATIVE AND AUGER RECOMBINATION RATES IN P-TYPE INGAASP DIODE LASERSSU CB; SCHLAFER J; MANNING J et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 4; PP. 595-596; BIBL. 6 REF.Article
BAND-TO-BAND AUGER EFFECT IN GASB AND INAS LASERSSUGIMURA A.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4405-4411; BIBL. 33 REF.Article
EFFET PHOTOMAGNETOELECTRIQUE DANS LES SEMICONDUCTEURS FORTEMENT EXCITES DANS LES CONDITIONS DE RECOMBINAISON AUGERTAMASHYAVICHYUS AV; SHATKOVSKIJ EV.1979; LITOV. FIZ. SBOR.; SUN; DA. 1979; VOL. 19; NO 1; PP. 77-83; ABS. LIT/ENG; BIBL. 11 REF.Article
A DIRECT CALCULATION OF OVERLAP INTEGRALS AND THE AUGER RECOMBINATION COEFFICIENT IN GAPDZWIG P.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 10; PP. 1809-1818; BIBL. 14 REF.Article
THEORY OF INTRINSIC RECOMBINATION AT ZERO TEMPERATURE IN SMALL GAP SEMICONDUCTORS. ESTIMATIONS FOR PBSSEMOCKER M; BEILER M.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 116; NO 1; PP. 205-215; ABS. GER; BIBL. 13 REF.Article
ETUDE DE LA RECOMBINAISON AUGER DES STRUCTURES A COUCHES MULTIPLES EN SILICIUM POUR UNE DENSITE DE COURANT ELEVEEKUZ'MIN VA; MNATSAKANOV TT; POMORTSEVA LI et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 6; PP. 988-992; BIBL. 18 REF.Article
IMPACT IONISATION AND AUGER RECOMBINATION INVOLVING TRAPS IN SEMICONDUCTORSROBBINS DJ; LANDSBERG PT.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 12; PP. 2425-2439; BIBL. 48 REF.Article
ETUDE DES VARIATIONS THERMIQUES DE LA DUREE DE VIE LINEAIRE, DU RENDEMENT D'EMETTEUR ET DU COEFFICIENT DE RECOMBINAISON AUGER D'APRES LA DUREE DU PROCESSUS TRANSITOIRE DE COMMUTATION D'UNE DIODE AU SILICIUMGREKHOV IV; KOROBKOV NN; OTBLESK AE et al.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 2; PP. 319-324; BIBL. 23 REF.Article
RECOMBINAISON AUGER DANS LE SILICIUMABAKUMOV VN; YASSIEVICH IN.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 7; PP. 1302-1310; BIBL. 9 REF.Article
AUGER RECOMBINATION IN PBTE.LISCHKA K; HUBER W.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2632-2633; BIBL. 10 REF.Article
RECOMBINAISON DES PORTEURS HORS D'EQUILIBRE DANS L'ARSENIURE D'INDIUM AUX NIVEAUX DE PHOTOEXCITATION ELEVESGALKIN GN; KHARAKHORIN FF; SHATKOVSKIJ EV et al.1975; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1975; VOL. 15; NO 6; PP. 1001-1007; ABS. RUSSE ANGL.; BIBL. 8 REF.Article
RECOMBINAISON AUGER DANS SI AUX BASSES TEMPERATURESDELIMOVA LA.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1349-1352; BIBL. 19 REF.Article
PHOTOCONDUCTIVITE DU MONOSELENIURE D'INDIUM AUX NIVEAUX D'EXCITATION OPTIQUE ELEVESABDULLAEV GB; TAGIROV VI; KYAZYM ZADE AG et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2228-2232; BIBL. 8 REF.Article
AUGER RECOMBINATION CROSS SECTION ASSOCIATED WITH DEEP TRAPS IN SEMICONDUCTORSRIDDOCH FA; JAROS M.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 33; PP. 6181-6188; BIBL. 19 REF.Article
IMPACT IONIZATION BY ELECTRIC FIELDS IN INTRINSIC INDIUM-ANTIMONIDE.BRUHNS H; HUBNER K.1977; Z. PHYS. B; DTSCH.; DA. 1977; VOL. 26; NO 3; PP. 227-232; BIBL. 11 REF.Article
Auger recombination in a quantum-well-heterostructure laserTAYLOR, R. I; ABRAM, R. A; BURT, M. G et al.IEE proceedings. Part J. Optoelectronics. 1985, Vol 132, Num 6, pp 364-370, issn 0267-3932Article
Simulation studies of the dynamic behavior of semiconductor lasers with Auger recombinationMING TANG; SHYH WANG.Applied physics letters. 1987, Vol 50, Num 26, pp 1861-1863, issn 0003-6951Article
INFLUENCE DE LA DIFFUSION ELECTRON-ELECTRON ENTRE VALLEES SUR LES TRANSITIONS OPTIQUES DANS LES SEMICONDUCTEURSKYUREGYAN AS.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 3; PP. 428-437; BIBL. 17 REF.Article
RECOMBINATION IN TELLURIUM AT HIGH OPTICAL EXCITATION.GALKIN GN; HERRMANN KH; BOBROVA EA et al.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 82; NO 1; PP. 237-242; ABS. RUSSE; BIBL. 19 REF.Article